NTD4960N
TYPICAL PERFORMANCE CURVES
60
50
10V
4V
T J = 25 ° C
3.8 V
3.6 V
60
50
V DS ≥ 10 V
40
30
3.4 V
40
30
20
10
0
0
1
2
3
4
3.2 V
3.0 V
2.8 V
5
20
10
0
0
1
T J = 125 ° C
T J = 25 ° C
2
3
T J = ? 55 ° C
4
5
0.040
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
0.012
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.036
0.032
0.028
0.024
I D = 30 A
T J = 25 ° C
0.011
0.010
0.009
T J = 25 ° C
V GS = 4.5 V
0.020
0.016
0.008
0.007
0.012
0.008
0.004
0.006
0.005
V GS = 10 V
0
2
3
4
5
6
7
8
9
10
11
0.004
10
20
30
40
50
60
1.8
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 3. On ? Resistance vs. Gate ? to ? Source
Voltage
10000
I D , DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
1.6
1.4
I D = 30 A
V GS = 10 V
1000
V GS = 0 V
T J = 150 ° C
1.2
1.0
0.8
100
T J = 125 ° C
0.6
? 50
? 25
0
25
50
75
100
125
150
175
10
2
4
6
8
10
12
14
16
18
20
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
4
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
vs. Drain Voltage
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相关代理商/技术参数
NTD4963N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 44 A, Single N−Channel, DPAK/IPAK
NTD4963N-1G 功能描述:MOSFET NFET IPAK 30V 44A 9.6MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4963N-35G 功能描述:MOSFET NFET DPAK 30V 44A 9.6MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4963NT4G 功能描述:MOSFET NFET DPAK 30V 44A 9.6MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4965N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 68 A, Single N?Channel, DPAK/IPAK
NTD4965N-1G 功能描述:MOSFET TRENCH 3.1 30V 4 mOhm NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4965N-35G 功能描述:MOSFET TRENCH 3.1 30V 4 mOhm NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4965NT4G 功能描述:MOSFET TRENCH 3.1 30V 4 mOhm NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube